Capacitor unit and manufacturing method thereof

ABSTRACT

A capacitor unit and a manufacturing method thereof, which mainly include a substrate, an isolation layer formed on the substrate, and capacitor stacked structures located on the isolation layer to form a capacitor integrated structure including the capacitor units, are provided. Therefore, the capacitor integrated structure can be cut to form a plurality of the capacitor units that can function as capacitors, thereby simplifying the capacitor manufacturing process and reducing the manufacturing cost.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 107139186, filed on Nov. 5, 2018. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a method of manufacturing a capacitor unit anda structure thereof. The invention particularly relates to a method ofmanufacturing a capacitor unit and a structure thereof which can form aplurality of the capacitor units by cutting, and the capacitor units canfunction as capacitors.

Description of Related Art

The complete manufacturing process of existing capacitors (e.g., MLCC)includes many process steps, such as pulping, ceramic film molding,printing, stacking, evenly applying pressure, cutting, degumming,sintering, chamfering, silver coating, burning, electroplating, testing,packaging and other steps. The product manufacturing process is complexbut very mature, the relevant industry chain suppliers or yield has longbeen a steady state of sufficient supply. Until the recent advancementof science and technology, the applications of various new fields ofInternet of Things (IoT), 5G communication, blockchain, artificialintelligence (AI), and electric vehicles have been developed, and thefunctions of various types of electronic products have been increasing,so the types and quantities of required components have becomeincreasingly large. The expansion of the number of the active componentsand the increase in precision have led to a multiplier of the number ofpassive components, and the multilayer ceramic capacitors (MLCCs) arethe most. As a result, the market is gradually beginning to show asituation of short supply, and the recent increase in production ofpassive component suppliers cannot fully meet market demand. Theshortage of goods will affect the development of the overall industry.On the other hand, how to layout all components within a limited spaceis a major issue. In order to meet the high-density component layout, itis imperative to reduce the component area or even the volume.Traditional capacitor manufacturing processes have faced challenges interms of area miniaturization or product precision.

SUMMARY OF THE INVENTION

In view of this, the invention provides another choice for market supplyby using a material, a structure, and a manufacturing process that isdifferent from the conventional multilayer ceramic capacitors (MLCCs).The invention can also reduce the difficulty of area miniaturization,thereby improving the precision of the product. On the other hand, thehigh-temperature calcination process in the manufacturing process of thetraditional multilayer ceramic capacitor (MLCC) can be avoided, therebyachieving energy saving and carbon reduction and reducing themanufacturing cost thereof. This is the technical problem to be solvedby this invention.

In view of the above-mentioned disadvantages of the prior art, theinvention provides a capacitor unit and a manufacturing method thereof,which provides an additional production capacity in the market whilesimultaneously solving the difficulty of miniaturization, simplifyingthe capacitor manufacturing process, and reducing the manufacturingcost.

To achieve the above and other related purposes, the invention providesa method of manufacturing a capacitor unit, including: providing asubstrate; forming an isolation layer on the substrate; forming a firstcapacitor stacked structure and a second capacitor stacked structure onthe isolation layer; forming electrode connectors on the first capacitorstacked structure and the second capacitor stacked structure, whereinthe electrode connectors are exposed, so that the electrode connectors,the first capacitor stacked structure, the second capacitor stackedstructure, the isolation layer, and the substrate are combined to form acapacitor integrated structure, wherein the isolation layer electricallyisolates the substrate from the first capacitor stacked structure andthe second capacitor stacked structure; and cutting the capacitorintegrated structure to form a first capacitor unit and a secondcapacitor unit separated from each other, wherein the first capacitorunit includes two of the electrode connectors, the first capacitorstacked structure, a portion of the isolation layer, and a portion ofthe substrate, and the second capacitor unit includes another two of theelectrode connectors, the second capacitor stacked structure, anotherportion of the isolation layer, and another portion of the substrate.

Preferably, in the above manufacturing method, the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure includes: forming a first conductive layer on the isolationlayer; forming a capacitor dielectric layer on the first conductivelayer; forming a second conductive layer on the capacitor dielectriclayer; lithographically etching the second conductive layer, thecapacitor dielectric layer, and the first conductive layer thereunder insequence to expose a first portion of the capacitor dielectric layer anda first portion of the isolation layer; forming an interlayer dielectriclayer to cover the second conductive layer, the first portion of thecapacitor dielectric layer, and the first portion of the isolationlayer; lithographically etching the interlayer dielectric layer to formfirst via holes and second via holes, wherein each of the first viaholes passes through the first portion of the capacitor dielectric layerto expose the first conductive layer under the first portion of thecapacitor dielectric layer, and each of the second via holes exposes thesecond conductive layer; respectively filling the first via holes andthe second via holes with a metal material to form first metal pillarsand second metal pillars; and forming a first bonding pad over the firstmetal pillars, and forming a second bonding pad over the second metalpillars, wherein the first bonding pad is electrically connected to thefirst conductive layer by the first metal pillars to form a firstelectrode, and the second bonding pad is electrically connected to thesecond conductive layer by the second metal pillars to form a secondelectrode.

Preferably, in the above manufacturing method, the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure includes: forming a first conductive layer on the isolationlayer; lithographically etching the first conductive layer to expose afirst portion of the isolation layer; forming two spacers connected totwo sidewalls of the first conductive layer; forming a capacitordielectric layer covering the first conductive layer and the firstportion of the isolation layer, wherein the capacitor dielectric layerincludes a third portion directly formed above the first portion of theisolation layer, and the capacitor dielectric layer and the sidewalls ofthe first conductive layer are isolated by the two spacers; forming asecond conductive layer on a portion of the capacitor dielectric layerand exposing a fourth portion of the capacitor dielectric layer abovethe first conductive layer; forming an interlayer dielectric layer tocover the second conductive layer and the fourth portion of thecapacitor dielectric layer; lithographically etching the interlayerdielectric layer to form first via holes and second via holes, whereineach of the first via holes passes through the fourth portion of thecapacitor dielectric layer to expose the first conductive layer underthe fourth portion, and each of the second via holes is disposed abovethe third portion of the capacitor dielectric layer to expose the secondconductive layer above the third portion; respectively filling the firstvia holes and the second via holes with a metal material to form firstmetal pillars and second metal pillars; forming a bonding pad metallayer to respectively cover the interlayer dielectric layer, the firstmetal pillars, and the second metal pillars; and lithographicallyetching the bonding pad metal layer to form a first bonding pad over thefirst metal pillars and form a second bonding pad above the second metalpillars, wherein the first bonding pad is electrically connected to thefirst conductive layer by the first metal pillars to form a firstelectrode, and the second bonding pad is electrically connected to thesecond conductive layer by the second metal pillars to form a secondelectrode.

Preferably, in the above manufacturing method, the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure includes: forming a first capacitor dielectric structure onthe isolation layer, wherein the first capacitor dielectric structureincludes a first conductive layer formed on the isolation layer and afirst capacitor dielectric layer formed on the first conductive layer,the first conductive layer includes a first left electrode and a firstright electrode isolated from each other, and the first capacitordielectric layer includes first left openings formed above the firstleft electrode and first right openings formed above the first rightelectrode; forming at least one second capacitor dielectric structure onthe first capacitor dielectric structure, wherein the second capacitordielectric structure includes a second conductive layer formed on thefirst capacitor dielectric layer and a second capacitor dielectric layerformed on the second conductive layer, the second conductive layerincludes a second left electrode and a second right electrode isolatedfrom each other, the second left electrode is electrically connected tothe first left electrode through the first left openings, the secondright electrode is electrically connected to the first right electrodethrough the first right openings, the second capacitor dielectric layerincludes second left openings formed above the second left electrode andsecond right openings formed above the second right electrode, thesecond left openings and the first left openings are offset from eachother, and the second right openings and the first right openings areoffset from each other; forming a third conductive layer on the secondcapacitor dielectric structure, wherein the third conductive layerincludes a third left electrode and a third right electrode isolatedfrom each other, the third left electrode is electrically connected tothe second left electrode through the second left openings, and thethird right electrode is electrically connected to the second rightelectrode through the second right openings; forming a third interlayerdielectric layer to cover the third conductive layer; lithographicallyetching the third interlayer dielectric layer to form first via holesand second via holes, wherein each of the first via holes exposes anupper surface of the third left electrode, and each of the second viaholes exposes an upper surface of the third right electrode;respectively filling the first via holes and the second via holes with ametal material to form first metal pillars and second metal pillars; andforming a first bonding pad over the first metal pillars, and forming asecond bonding pad over the second metal pillars, wherein the firstbonding pad is electrically connected to the third left electrode by thefirst metal pillars, and the second bonding pad is electricallyconnected to the third right electrode by the second metal pillars.

Preferably, in the above manufacturing method, the step of forming thefirst capacitor dielectric structure includes: forming the firstconductive layer on the isolation layer; forming a photoresist layer onthe first conductive layer; performing a lithography process on thephotoresist layer and then etching the first conductive layer to form afirst trench, so that the first left electrode and the first rightelectrode isolated by the first trench are formed in the firstconductive layer; removing the photoresist layer above the first leftelectrode and layer the first right electrode; filling the first trenchwith a first interlayer dielectric layer, and making an upper surface ofthe first interlayer dielectric layer flush with an upper surface of thefirst conductive layer; forming the first capacitor dielectric layercovering the first interlayer dielectric layer and the first conductivelayer; and lithographically etching the first capacitor dielectric layerto form the first left openings exposing the first left electrode andthe first right openings exposing the first right electrode.

Preferably, in the above manufacturing method, the step of forming thesecond capacitor dielectric structure includes: forming the secondconductive layer on the first capacitor dielectric layer, wherein thefirst left openings and the first right openings are filled with thesecond conductive layer; lithographically etching the second conductivelayer to form a second trench, so that the second left electrode and thesecond right electrode isolated by the second trench are formed in thesecond conductive layer, wherein the second trench is offset from thefirst trench, the second left electrode is electrically connected to thefirst left electrode through the first left openings, and the secondright electrode is electrically connected to the first right electrodethrough the first right openings; forming a second interlayer dielectriclayer on the second conductive layer, filling the second trench with thesecond interlayer dielectric layer, and making an upper surface of thesecond interlayer dielectric layer in the second trench flush with anupper surface of the second conductive layer; forming the secondcapacitor dielectric layer covering the second interlayer dielectriclayer and the second conductive layer; and lithographically etching thesecond capacitor dielectric layer to form the second left openingsexposing the second left electrode and the second right openingsexposing the second right electrode, wherein the second left openingsare offset from the first left openings, and the second right openingsare offset from the first right openings.

Preferably, in the above manufacturing method, the method furtherincludes: forming the third conductive layer on the second capacitordielectric layer, wherein the second left openings and the second rightopenings are filled with the third conductive layer; etching the thirdconductive layer to form a third trench, so that the third leftelectrode and the third right electrode isolated by the third trench areformed in the third conductive layer, wherein the third trench is offsetfrom the second trench, the third left electrode is electricallyconnected to the second left electrode through the second left openings,and the third right electrode is electrically connected to the secondright electrode through the second right openings; and forming the thirdinterlayer dielectric layer on the third conductive layer, wherein thethird trench is filled with the third interlayer dielectric layer.

Preferably, in the above manufacturing method, the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure includes: forming a first capacitor dielectric structure onthe isolation layer, wherein the first capacitor dielectric structureincludes a first conductive layer formed on the isolation layer and afirst capacitor dielectric layer formed on the first conductive layer,the first conductive layer includes a first left electrode and a firstright electrode isolated from each other, and the first capacitordielectric layer includes first left openings formed above the firstleft electrode and first right openings formed above the first rightelectrode; forming a third conductive layer on the first capacitordielectric structure, wherein the third conductive layer includes athird left electrode and a third right electrode isolated from eachother, the third left electrode is electrically connected to the firstleft electrode through the first left openings, and the third rightelectrode is electrically connected to the first right electrode throughthe first right openings; forming a third interlayer dielectric layer tocover the third conductive layer; lithographically etching the thirdinterlayer dielectric layer to form first via holes and second viaholes, wherein each of the first via holes exposes an upper surface of aportion the third left electrode, and each of the second via holesexposes an upper surface of a portion of the third right electrode;respectively filling the first via holes and the second via holes with ametal material to form first metal pillars and second metal pillars; andforming a first bonding pad over the first metal pillars, and forming asecond bonding pad over the second metal pillars, wherein the firstbonding pad is electrically connected to the third left electrode by thefirst metal pillars, and the second bonding pad is electricallyconnected to the third right electrode by the second metal pillars.

Preferably, in the above manufacturing method, the step of respectivelyfilling the first via holes and the second via holes with the metalmaterial to form first metal pillars and second metal pillars includes:depositing the metal material on the interlayer dielectric layer,wherein the first via holes and the second via holes are filled with themetal material; and performing a planarization process to planarize anupper surface of the interlayer dielectric layer.

Preferably, in the above manufacturing method, the method furtherincludes: forming a protection layer to respectively cover the firstbonding pad, the second bonding pad, and the interlayer dielectriclayer; and lithographically etching the protection layer to respectivelyform a first bonding pad opening exposing the first bonding pad and asecond bonding pad opening exposing the second bonding pad.

Preferably, in the above manufacturing method, the first capacitor unitis a passive component connected to a printed circuit board by the twoof the electrode connectors.

Preferably, in the above manufacturing method, the second capacitor unitis a passive component connected to a printed circuit board by theanother two of the electrode connectors.

Furthermore, the invention further provides a capacitor unit formed by acapacitor integrated structure, wherein the capacitor integratedstructure is cut to form capacitor units separated from each other, andeach of the capacitor units comprises including: a substrate; anisolation layer located on the substrate; a capacitor stacked structurelocated on the isolation layer, wherein the isolation layer electricallyisolates the substrate from the capacitor stacked structure; and twoelectrode connectors located on the capacitor stacked structure andbeing exposed.

Preferably, in the above capacitor unit, the capacitor stacked structureincludes: a first conductive layer located on a portion of the isolationlayer to expose a first portion of the isolation layer; a capacitordielectric layer located on the first conductive layer; a secondconductive layer located on a portion of the capacitor dielectric layerto expose a first portion of the capacitor dielectric layer; aninterlayer dielectric layer located on the second conductive layer, thefirst portion of the capacitor dielectric layer, and the first portionof the isolation layer; a first bonding pad and a second bonding padrespectively located on the interlayer dielectric layer; and first metalpillars and second metal pillars, wherein the first metal pillars arelocated in the interlayer dielectric layer and pass through the firstportion of the capacitor dielectric layer to connect to the firstconductive layer under the first portion of the capacitor dielectriclayer, so that the first conductive layer is electrically connected tothe first bonding pad by the first metal pillars to form a firstelectrode, and the second metal pillars are located in the interlayerdielectric layer and connect to the second conductive layer, so that thesecond conductive layer is electrically connected to the second bondingpad by the second metal pillars to form a second electrode.

Preferably, in the above capacitor unit, the capacitor stacked structureincludes: a first conductive layer located on the isolation layer andexposing a first portion of the isolation layer, wherein a spacer isformed on each of two sidewalls of the first conductive layer; acapacitor dielectric layer located on the first conductive layer and thefirst portion of the isolation layer, wherein the capacitor dielectriclayer further includes a third portion directly located above theisolation layer, and the capacitor dielectric layer and each of thesidewalls of the first conductive layer are isolated by the spacer; asecond conductive layer located on a portion of the capacitor dielectriclayer and exposing a fourth portion of the capacitor dielectric layerabove the first conductive layer; an interlayer dielectric layer locatedon the second conductive layer and the fourth portion of the capacitordielectric layer; a first bonding pad and a second bonding padrespectively located on the interlayer dielectric layer; and first metalpillars and second metal pillars, wherein the first metal pillars arelocated in the interlayer dielectric layer and pass through the fourthportion of the capacitor dielectric layer to connect to the firstconductive layer under the fourth portion of the capacitor dielectriclayer, so that the first conductive layer is electrically connected tothe first bonding pad by the first metal pillars to form a firstelectrode, and the second metal pillars are located in the interlayerdielectric layer and connect to the second conductive layer above thethird portion of the capacitor dielectric layer, so that the secondconductive layer is electrically connected to the second bonding pad bythe second metal pillars to form a second electrode.

Preferably, in the above capacitor unit, the capacitor stacked structureincludes: a first capacitor dielectric structure located on theisolation layer and having a first conductive layer located on theisolation layer and a first capacitor dielectric layer located on thefirst conductive layer, wherein the first conductive layer includes afirst left electrode and a first right electrode isolated from eachother, and the first capacitor dielectric layer includes first leftopenings formed above the first left electrode and first right openingsformed above the first right electrode; at least one second capacitordielectric structure located on the first capacitor dielectricstructure, wherein the second capacitor dielectric structure includes asecond conductive layer located on the first capacitor dielectric layerand a second capacitor dielectric layer located on the second conductivelayer, the second conductive layer includes a second left electrode anda second right electrode isolated from each other, the second leftelectrode is electrically connected to the first left electrode throughthe first left openings, the second right electrode is electricallyconnected to the first right electrode through the first right openings,the second capacitor dielectric layer includes second left openingslocated above the second left electrode and second right openingslocated above the second right electrode, the second left openings andthe first left openings are offset from each other, and the second rightopenings and the first right openings are offset from each other; athird conductive layer located on the second capacitor dielectricstructure, wherein the third conductive layer includes a third leftelectrode and a third right electrode isolated from each other, thethird left electrode is electrically connected to the second leftelectrode through the second left openings, and the third rightelectrode is electrically connected to the second right electrodethrough the second right openings; a third interlayer dielectric layerlocated on the third conductive layer; a first bonding pad and a secondbonding pad respectively located on the third interlayer dielectriclayer; and first metal pillars and second metal pillars respectivelyformed in the third interlayer dielectric layer, wherein the third leftelectrode is electrically connected to the first bonding pad by thefirst metal pillars, and the third right electrode is electricallyconnected to the second bonding pad by the second metal pillars.

Preferably, in the above capacitor unit, the capacitor stacked structureincludes: a first capacitor dielectric structure located on theisolation layer and having a first conductive layer located on theisolation layer and a first capacitor dielectric layer located on thefirst conductive layer, wherein the first conductive layer includes afirst left electrode and a first right electrode isolated from eachother, and the first capacitor dielectric layer includes first leftopenings formed above the first left electrode and first right openingsformed above the first right electrode; a third conductive layer locatedon the first capacitor dielectric structure, wherein the thirdconductive layer includes a third left electrode and a third rightelectrode isolated from each other, the third left electrode iselectrically connected to the first left electrode through the firstleft openings, and the third right electrode is electrically connectedto the first right electrode through the first right openings; a thirdinterlayer dielectric layer located on the third conductive layer; afirst bonding pad and a second bonding pad respectively located on thethird interlayer dielectric layer; and first metal pillars and secondmetal pillars respectively formed in the third interlayer dielectriclayer, wherein the third left electrode is electrically connected to thefirst bonding pad by the first metal pillars, and the third rightelectrode is electrically connected to the second bonding pad by thesecond metal pillars.

Preferably, the above capacitor unit further includes: a protectionlayer respectively covering the first bonding pad and the second bondingpad; a first bonding pad opening formed in the protective layer toexpose the first electrode; and a second bonding pad opening formed onthe second bonding pad to expose the second electrode.

Preferably, in the above capacitor unit, each of the capacitor units isa passive component connected to a printed circuit board by the twoelectrode connectors.

Based on the above description, the invention forms the capacitorstacked structures on the substrate by the isolation layer to form thecapacitor integrated structure including the capacitor units. Therefore,the capacitor integrated structure can be cut to form a plurality of thecapacitor units that can function as capacitors. Compared with themanufacturing process of the traditional MLCC, the invention cansimplify the capacitor manufacturing process and the capacitor structureand can avoid the high-temperature calcination process in themanufacturing process of the traditional MLCC, so as to achieve thepurpose of reducing the manufacturing cost.

In order to make the aforementioned and other objects, features andadvantages of the invention comprehensible, a preferred embodimentaccompanied with figures is described in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1-1 to FIG. 1-10 are schematic views illustrating embodiments ofthe capacitor unit at different manufacture stages according to a firstembodiment of the invention.

FIG. 2-1 to FIG. 2-16 are schematic views illustrating embodiments ofthe capacitor unit at different manufacture stages according to a secondembodiment of the invention.

FIG. 3-1 to FIG. 3-20 are schematic views illustrating embodiments ofthe capacitor unit at different manufacture stages according to a thirdembodiment of the invention.

FIG. 4A, FIG. 4B, and FIG. 4C are schematic views illustrating a firstembodiment of the capacitor unit of the invention.

FIG. 5A, FIG. 5B, and FIG. 5C are schematic views illustrating a secondembodiment of the capacitor unit of the invention.

DESCRIPTION OF THE EMBODIMENTS

The method of manufacturing the capacitor unit of the invention mainlyincludes the following steps. A substrate is provided. An isolationlayer is formed on the substrate by, for example, a deposition method. Afirst capacitor stacked structure and a second capacitor stackedstructure are formed on the isolation layer, wherein the substrate iselectrically isolated from the first capacitor stacked structure and thesecond capacitor stacked structure, and the first capacitor stackedstructure, the second capacitor stacked structure, the isolation layer,and the substrate are combined to form a capacitor integrated structure.In the embodiments as shown in FIG. 4A, FIG. 4B, FIG. 5A, and FIG. 5B,the first capacitor stacked structure 12A and the second capacitorstacked structure 12B are distributed in an array form on the isolationlayer 11 of the substrate 10 to form the capacitor integrated structure1.

Then, the capacitor integrated structure 1 is cut to form the firstcapacitor unit 100A and the second capacitor unit 100B separated fromeach other, and the first capacitor unit 100A and the second capacitorunit 100B can be used as capacitors. Therefore, the capacitormanufacturing process can be simplified, and the capacitor can bemass-produced by using the existing semiconductor equipment forsubstrate. The first capacitor unit 100A includes two electrodeconnectors E, the first capacitor stacked structure 12A, a portion ofthe isolation layer 11, and a portion of the substrate 10. The secondcapacitor unit 100B includes another two electrode connectors E, thesecond capacitor stacked structure 12B, another portion of the isolationlayer 11, and another portion of the substrate 10. The electrodeconnectors E are formed on the first capacitor stacked structure 12A andthe second capacitor stacked structure 12B, and the electrode connectorsE are exposed. The first capacitor unit 100A is a passive componentconnected to a printed circuit board by the electrode connectors E. Thesecond capacitor unit 100B is a passive component connected to a printedcircuit board by the electrode connectors E. In the embodiments as shownin FIG. 4C and FIG. 5C, the electrode connectors E of the firstcapacitor unit 100A and the second capacitor unit 100B can be designedas a rectangular cube or a semi-spherical sphere according to actualneeds. One of the two electrode connectors E of first capacitor unit100A (or second capacitor unit 100B) may be electrically connected tothe first bonding pad (e.g., the first bonding pad 127A in FIG. 1-10,the first bonding pad 227A in FIG. 2-16, or the first bonding pad 327Ain FIG. 3-20) of the first capacitor stacked structure 12A (or thesecond capacitor stacked structure 12B). The other one of the twoelectrode connectors E of first capacitor unit 100A (or second capacitorunit 100B) may be electrically connected to the second bonding pad(e.g., the second bonding pad 127B in FIG. 1-10, the second bonding pad227B in FIG. 2-16, or the second bonding pad 327B in FIG. 3-20) of thesecond capacitor stacked structure 12A (or the second capacitor stackedstructure 12B). The electrode connectors E may be formed by the method(e.g., bumping process) well known in the art and will not be describedherein.

Regarding the manufacture of the capacitor unit of the invention, thefollowing embodiments are provided for explanation.

First Embodiment

Referring to FIG. 1-1 to FIG. 1-10, FIG. 1-1 to FIG. 1-10 are schematicviews illustrating a series of embodiments of the capacitor unit atdifferent manufacture stages according to a first embodiment of theinvention.

As shown in FIG. 1-1, the substrate 10 (e.g., a wafer) is provided onwhich the isolation layer 11 is formed. In the present embodiment, theisolation layer 11 is, for example, an underlying insulating layerdeposited on the substrate 10 by a chemical vapor deposition (CVD)process or an oxidation process, and the substrate 10 may be a carrierused to produce an integrated circuit. In one embodiment, the substrate10 may be, for example, a silicon substrate, but not limited thereto.The substrate 10 may be other types of substrates such as a glasssubstrate or a quartz substrate.

As shown in FIG. 1-1, in sequence, the first conductive layer 121 isformed on the isolation layer 11, the capacitor dielectric layer 122 isformed on the first conductive layer 121, and the second conductivelayer 123 is formed on the capacitor dielectric layer 122. In thepresent embodiment, the first conductive layer 121 and the secondconductive layer 123 may be metal layers formed by sputtering,electroplating, or evaporation, but not limited thereto. The firstconductive layer 121 and the second conductive layer 123 may also be anon-metal layer formed by chemical vapor deposition. The capacitordielectric layer 122 may be formed, for example, by deposition. Forexample, in addition to metal, the conductive layer material of thefirst conductive layer 121 and the second conductive layer 123 mayinclude a non-metal (e.g., a doped polysilicon, a doped single crystalsilicon, or a doped amorphous silicon) or a metal silicide.

As shown in FIG. 1-2, a portion of the second conductive layer 123 islithographically etched to expose a portion of the capacitor dielectriclayer 122. Next, as shown in FIG. 1-2, a portion of the exposed portionof the capacitor dielectric layer 122 and the first conductive layer 121thereunder are lithographically etched to expose a portion of theisolation layer 11. In the present embodiment, the first portion 122 aof the capacitor dielectric layer 122 and the first portion 11 a of theisolation layer 11 a re exposed.

As shown in FIG. 1-4, the interlayer dielectric layer 124 is formed tocover the first conductive layer 123, the exposed first portion 122 a ofthe capacitor dielectric layer 122, and the exposed first portion 11 aof the isolation layer 11. In the present embodiment, the interlayerdielectric layer 124 is formed, for example, by deposition. Then, achemical mechanical polishing (CMP) process or an etch back process isperformed to planarize the upper surface of the interlayer dielectriclayer 124, and a lithography and etching process is performed to formthe first via holes 125A and the second via holes 125B in the interlayerdielectric layer 124. Each of the first via holes 125A passes throughthe first portion 122 a of the capacitor dielectric layer 122 to exposethe first conductive layer 121 under the first portion 122 a of thecapacitor dielectric layer 122, and each of the second via holes 125Bexposes the second conductive layer 123.

As shown in FIG. 1-5, for example, a chemical vapor deposition (CVD)process is performed to form a metal material 126 over the interlayerdielectric layer 124, and the first via holes 125A and the second viaholes 125B are filled with the metal material 126.

As shown in FIG. 1-6, for example, a chemical mechanical polishing (CMP)process or an etch back process is performed to remove the metalmaterial 126 on the upper surface of the dielectric layer 124 and removethe metal material 126 outside the first via holes 125A and the secondvia holes 125B, thereby forming the first metal pillars 126A and thesecond metal pillars 126B in the first via holes 125A and the second viaholes 125B. As a result of performing the planarization processdescribed above, the upper surface of the interlayer dielectric layer124 is flush with the upper surfaces of the first metal pillars 126A andthe upper surfaces of the second metal pillars 126B.

As shown in FIG. 1-7, the bonding pad metal layer 127 is formed over theinterlayer dielectric layer 124, the first metal pillars 126A, and thesecond metal pillars 126B. In the present embodiment, the bonding padmetal layer 127 is formed, for example, by sputtering.

As shown in FIG. 1-8, the metal bonding pad layer 127 islithographically etched to form the first bonding pad 127A over thefirst metal pillars 126A and form the second bonding pad 127B over thesecond metal pillars 126B. The first bonding pad 127A is electricallyconnected to the first conductive layer 121 by the first metal pillars126A to form the first electrode, and the second bonding pad 127B iselectrically connected to the second conductive layer 123 by the secondmetal pillars 126B to form the second electrode.

As shown in FIG. 1-9, the protection layer 13 is formed to respectivelycover the first bonding pad 127A, the second bonding pad 127B, and theexposed interlayer dielectric layer 124. In the present embodiment, theprotection layer 13 may be formed by deposition.

As shown in FIG. 1-10, the protection layer 13 is lithographicallyetched to form the first bonding pad opening 14A exposing the firstbonding pad 127A and the second bonding pad opening 14B exposing thesecond bonding pad 127B, respectively.

Second Embodiment

Referring to FIG. 2-1 to FIG. 2-16, FIG. 2-1 to FIG. 2-16 are schematicviews illustrating embodiments of the capacitor unit at differentmanufacture stages according to a second embodiment of the invention.

As shown in FIG. 2-1, the substrate 10 is provided on which theisolation layer 11 is formed. In the present embodiment, the isolationlayer 11 is, for example, an underlying insulating layer deposited onthe substrate 10 by a chemical vapor deposition (CVD) process or anoxidation process. In one embodiment, the substrate 10 may be, forexample, a silicon substrate, but not limited thereto. The substrate 10may be other types of substrates such as a glass substrate or a quartzsubstrate.

As shown in FIG. 2-2, the first conductive layer 221 is formed on theisolation layer 11. In the present embodiment, the first conductivelayer 221 may be a metal layer formed by sputtering, electroplating, orevaporation, but not limited thereto. The first conductive layer 221 mayalso be a non-metal layer formed by chemical vapor deposition. That is,in addition to metal, the conductive layer material of the firstconductive layer 221 may include a non-metal (e.g., a doped polysilicon,a doped single crystal silicon, or a doped amorphous silicon) or a metalsilicide.

As shown in FIG. 2-3, the first conductive layer 221 is lithographicallyetched to expose the first portion 11 a of the isolation layer 11 is.

As shown in FIG. 2-4, the interlayer dielectric layer 2215 is depositedon the first conductive layer 221 and on the first portion 11 a of theisolation layer 11.

As shown in FIG. 2-5, the interlayer dielectric layer 2215 is etchedback to remove the interlayer dielectric layer 2215 above the firstconductive layer 221 and remove a portion of the interlayer dielectriclayer 2215 above the first portion 11 a of the isolation layer 11,thereby forming the spacer 2215 a and the spacer 2215 b connected to twosidewalls of the first conductive layer 221.

As shown in FIG. 2-6, the capacitor dielectric layer 222 is formed tocover the first conductive layer 221, the spacers 2215 a, 2215 b and thefirst portion 11 a of the isolation layer 11, wherein the capacitordielectric layer 222 includes the third portion 222 a directly formedabove the first portion 11 a of the isolation layer 11, and thecapacitor dielectric layer 222 and the sidewalls of the first conductivelayer 221 are isolated by the spacers 2215 a, 2215 b, thereby preventingthe early breakdown of the capacitor dielectric layer 222 and preventingthe capacitor from being disable due to the generation of the breakdowncurrent.

As shown in FIG. 2-7, the second conductive layer 223 is formed on thecapacitor dielectric layer 222. In the present embodiment, the secondconductive layer 223 may be formed, for example, by sputtering,electroplating, or evaporation, but not limited thereto. However, thesecond conductive layer 223 may also be a non-metal layer formed bychemical vapor deposition. That is, in addition to metal, the conductivelayer material of the second conductive layer 223 may include anon-metal (e.g., a doped polysilicon, a doped single crystal silicon, ora doped amorphous silicon) or a metal silicide.

As shown in FIG. 2-8, the second conductive layer 223 islithographically etched to expose the fourth portion 222 b of thecapacitor dielectric layer 222 above the first conductive layer 221.

As shown in FIG. 2-9, the interlayer dielectric layer 224 is formed tocover the second conductive layer 223 and the fourth portion 222 b ofthe capacitor dielectric layer 222, and the upper surface of theinterlayer dielectric layer 224 is planarized by performing a chemicalmechanical polishing (CMP) process or an etch back process. In thepresent embodiment, the interlayer dielectric layer 224 is formed, forexample, by deposition.

As shown in FIG. 2-10, the interlayer dielectric layer 224 is etched toform the first via holes 225A and the second via holes 225B, whereineach of the first via holes 225A passes through the fourth portion 222 bof the capacitor dielectric layer 222 to expose the first conductivelayer 221 under the fourth portion 222 b, and each of the second viaholes 225B is disposed above the third portion 222 a of the capacitordielectric layer 222 to expose the second conductive layer 223 above thethird portion 222 a. Since the height of the capacitor dielectric layer222 is not high, as shown in FIG. 2-10, the first via holes 225A and thesecond via holes 225B formed in the present embodiment are approximatelyequal in height.

As shown in FIG. 2-11, for example, a physical vapor deposition (PVD)process, a chemical vapor deposition (CVD) process, or a combination ofboth is performed to form the metal material 226 over the interlayerdielectric layer 224, and the first via holes 225A and the second viaholes 225B are filled with the metal material 226. Generally, the metalmaterial 226 formed in the first via holes 225A and the second via holes225B is mainly tungsten, and the metal material 226 may include a layerof titanium nitride/titanium composite material as an adhesive layer(not shown). The adhesive layer is typically formed by physical vapordeposition (PVD), so the metal material 226 may be composed of acomposite material.

As shown in FIG. 2-12, for example, a chemical mechanical polishing(CMP) process or an etch back process is performed to remove the metalmaterial 226 on the upper surface of the interlayer dielectric layer 224and remove the metal material 226 outside the first via holes 225A andsecond via holes 225B, thereby forming the first metal pillars 226A andthe second metal pillars 226B in the first via holes 225A and the secondvia holes 225B. As a result of performing the planarization processdescribed above, the upper surface of the interlayer dielectric layer224 is flush with the upper surfaces of the first metal pillars 226A andthe upper surfaces of the second metal pillars 226B. In addition, sincethe first via holes 225A and the second via holes 225B are approximatelyequal in height, the first metal pillars 226A and the second metalpillars 226B are approximately equal in height.

As shown in FIG. 2-13, the bonding pad metal layer 227 is formed overthe interlayer dielectric layer 224, the first metal pillars 226A, andthe second metal pillars 226B. In the present embodiment, the bondingpad metal layer 227 is formed, for example, by sputtering. Next, asshown in FIG. 2-14, the metal bonding pad layer 227 is lithographicallyetched to form the first bonding pad 227A over the first metal pillars226A and form the second bonding pad 227B over the second metal pillars226B. The first bonding pad 227A is electrically connected to the firstconductive layer 221 by the first metal pillars 226A to form the firstelectrode, and the second bonding pad 227B is electrically connected tothe second conductive layer 223 by the second metal pillars 226B to formthe second electrode.

As shown in FIG. 2-15, the protection layer 13 is formed to respectivelycover the first bonding pad 227A, the second bonding pad 227B, and theexposed interlayer dielectric layer 224. In the present embodiment, theprotection layer 13 may be formed by deposition. Next, as shown in FIG.2-16, the protection layer 13 is lithographically etched to form thefirst bonding pad opening 14A exposing the first bonding pad 227A andthe second bonding pad opening 14B exposing the second bonding pad 227B,respectively.

Third Embodiment

Referring to FIG. 3-1 to FIG. 3-20, FIG. 3-1 to FIG. 3-20 are schematicviews illustrating embodiments of the capacitor unit at differentmanufacture stages according to a third embodiment of the invention.

As shown in FIG. 3-1, the substrate 10 is provided on which theisolation layer 11 is formed. In the present embodiment, the isolationlayer 11 is, for example, an underlying insulating layer deposited onthe substrate 10 by a chemical vapor deposition (CVD) process or anoxidation process. In one embodiment, the substrate 10 may be, forexample, a silicon substrate, but not limited thereto. The substrate 10may be other types of substrates such as a glass substrate or a quartzsubstrate.

In the present embodiment, the first capacitor dielectric structure 310is formed on the isolation layer 11 (as shown in FIG. 3-2 to FIG. 3-8).The first capacitor dielectric structure 310 includes the firstconductive layer 311 formed on the isolation layer 11 a nd the firstcapacitor dielectric layer 312 formed on the first conductive layer 311.The first conductive layer 311 includes the first left electrode 311Aand the first right electrode 311B isolated from each other. The firstcapacitor dielectric layer 312 includes first left openings 312A formedabove the first left electrode 311A and first right openings 312B formedabove the first right electrode 311B.

Specifically, as shown in FIG. 3-2, the first conductive layer 311 isformed on the isolation layer 11. In the present embodiment, the firstconductive layer 311 may be a metal layer formed by sputtering,electroplating, or evaporation, but not limited thereto. The firstconductive layer 311 may also be a non-metal layer formed by chemicalvapor deposition. That is, in addition to metal, the conductive layermaterial of the first conductive layer 311 may include a non-metal(e.g., a doped polysilicon, a doped single crystal silicon, or a dopedamorphous silicon) or a metal silicide. As shown in FIG. 3-3, after thephotoresist layer 3114 is formed on the first conductive layer 311, thefirst conductive layer 311 is etched by an etching process using thephotoresist layer 3114 to form the first trench 311C, so that the firstleft electrode 311A and the first right electrode 311B isolated by thefirst trench 311C are formed in the first conductive layer 311.

As shown in FIG. 3-4, the photoresist layer 3114 above the first leftelectrode 311A and the first right electrode 311B is removed.

As shown in FIG. 3-5, the first interlayer dielectric layer 3115 isformed to cover the first left electrode 311A and the first rightelectrode 311B, and the first trench 311C is filled with the firstinterlayer dielectric layer 3115. In the present embodiment, the firstinterlayer dielectric layer 3115 is formed, for example, by deposition.

As shown in FIG. 3-6, a planarization process is performed, so that theupper surface of the first interlayer dielectric layer 3115 is flushwith the upper surface of the first conductive layer 311 (i.e., thefirst left electrode 311A and the first right electrode 311B). In thepresent embodiment, the planarization process includes a chemicalmechanical polishing (CMP) process or an etch back process.

As shown in FIG. 3-7, the first capacitor dielectric layer 312 is formedto cover the first interlayer dielectric layer 3115 and the firstconductive layer 311 (i.e., the first left electrode 311A and the firstright electrode 311B). In the present embodiment, the first capacitordielectric layer 312 is deposited, for example, by a chemical vapordeposition (CVD) process.

As shown in FIG. 3-8, the first capacitor dielectric layer 312 islithographically etched to form the first left openings 312A exposingthe first left electrode 311A and the first right openings 312B exposingthe first right electrode 311B. Furthermore, the first left openings312A and the first right openings 312B will be filled with a conductivematerial in a subsequent process to form a conductive path betweendifferent conductive layers (please refer to the detailed descriptionbelow). So far, the process of forming the first capacitor dielectricstructure 310 on the isolation layer 11 is completed.

Then, at least one second capacitor dielectric structure 320 is formedon the first capacitor dielectric structure 310 (as shown in FIG. 3-9 toFIG. 3-15). In the present embodiment, the second capacitor dielectricstructure 320 includes the second conductive layer 321 formed on thefirst capacitor dielectric layer 312 and the second capacitor dielectriclayer 322 formed on the second conductive layer 321. The secondconductive layer 321 includes the second left electrode 321A and thesecond right electrode 321B isolated from each other. The second leftelectrode 321A is electrically connected to the first left electrode311A through the first left openings 312A. The second right electrode321B is electrically connected to the first right electrode 311B throughthe first right openings 312B. The second capacitor dielectric layer 322includes second left openings 322A formed above the second leftelectrode 321A and second right openings 322B formed above the secondright electrode 321B. The second left openings 322A and the first leftopenings 312A are offset from each other, and the second right openings322B and the first right openings 312B are offset from each other.

Specifically, as shown in FIG. 3-9, the second conductive layer 321 isformed on the first capacitor dielectric layer 312, and the first leftopening 312A and the first right opening 312B are filled with the secondconductive layer 321. In the present embodiment, the second conductivelayer 321 is formed, for example, by sputtering. The second leftrecesses 321C and second right recesses 321D are correspondingly formedon the upper surface of the second conductive layer 321 located abovethe first left openings 312A and the first right openings 312B.

Next, the photoresist layer (not shown) is formed on the secondconductive layer 321, and the photoresist layer and the secondconductive layer 321 are lithographically etched to form the secondtrench 321E, so that the second left electrode 321A and the second rightelectrode 312B isolated by the second trench 321E are formed in thesecond conductive layer 321, and then the photoresist layer above thesecond left electrode 321A and the second right electrode 321B isremoved. As shown in FIG. 3-10, the forming position of the secondtrench 321E in the second conductive layer 321 is offset from theforming position of the first trench 311C in the first conductive layer311. The second left electrode 321A is electrically connected to thefirst left electrode 311A through the first left openings 312A, and thesecond right electrode 321B is electrically connected to the first rightelectrode 311B through the first right openings 312B.

As shown in FIG. 3-11, the second interlayer dielectric layer 3215 isformed to cover the second left electrode 321A and the second rightelectrode 321B, and the second trench 321E is filled with the secondinterlayer dielectric layer 3215. In the present embodiment, the secondinterlayer dielectric layer 3215 is formed, for example, by deposition.Then, as shown in FIG. 3-12, a planarization process is performed, sothat the upper surface of the second interlayer dielectric layer 3215 isflush with the upper surface of the second conductive layer 321 (i.e.,the second left electrode 321A and the second right electrode 321B). Inthe present embodiment, the planarization process includes a chemicalmechanical polishing (CMP) process or an etch back process.

As shown in FIG. 3-13, the second capacitor dielectric layer 322 isformed to cover the second interlayer dielectric layer 3215 (i.e., thesecond trench 321E) and the second conductive layer 321 (i.e., thesecond left electrode 321A and the second right electrode 321B). Thesecond capacitor dielectric layer 322 is lithographically etched to formthe second left openings 322A exposing the second left electrode 321Aand the second right openings 322B exposing the second right electrode321B. The second left openings 322A are offset from the first leftopenings 312A. The second right openings 322B are offset from the firstright openings 312B. Furthermore, the second left openings 322A and thesecond right openings 322B will be filled with a conductive material ina subsequent process to form a conductive path between differentconductive layers. So far, the process of forming the second capacitordielectric structure 320 on the first capacitor dielectric structure 310is completed.

In addition, a plurality of the second capacitor dielectric structures320 may be formed on the first capacitor dielectric structure 310. FIGS.3-14 to 3-15 illustrate a process for forming a plurality of the secondcapacitor dielectric structures 320 on the first capacitor dielectricstructure 310.

Referring to FIG. 3-16, the third conductive layer 323 is formed on thesecond capacitor dielectric structure 320. The third conductive layer323 includes the third left electrode 323A and the third right electrode323B isolated from each other. The third left electrode 323A iselectrically connected to the second left electrode 321A through thesecond left openings 322A, and the third right electrode 323B iselectrically connected to the second right electrode 321B through thesecond right openings 322B. Then, the third interlayer dielectric layer324 is formed to cover the third conductive layer 323.

Specifically, first, the third conductive layer 323 is formed on thesecond capacitor dielectric layer 322, and the second left opening 322Aand the second right opening 322B are filled with the third conductivelayer 323, so that the third left recesses 323C located above the secondleft openings 322A and the third right recesses 323D located above thesecond right openings 322B are formed on the upper surface of the thirdconductive layer 323.

Then, the third conductive layer 323 is etched to form the third trench323E in the third conductive layer 323 and form the third left electrode323A and the third right electrode 323B isolated by the third trench323E. The third trench 323E is offset from the second trench 321E. Thethird left electrode 323A is electrically connected to the second leftelectrode 321A through the second left openings 322A, and the thirdright electrode 323B is electrically connected to the second rightelectrode 321B through the second right openings 322B. Next, the thirdinterlayer dielectric layer 324 is formed on the third conductive layer323, and the third trench 323E is filled with the third interlayerdielectric layer 324.

Then, the third interlayer dielectric layer 324 is etched to form thefirst via holes 325A and the second via holes 325B. Each of the firstvia holes 325A exposes the upper surface of the third left electrode323A, and each of the second via holes 325B exposes the upper surface ofthe third right electrode 323B.

As shown in FIG. 3-17, for example, a CVD process is performed to formthe metal material 326 above the third interlayer dielectric layer 324,and the first via holes 325A and the second via holes 325B are filledwith the metal material 326. Generally, the metal material 326 formed inthe first via holes 325A and the second via holes 325B is mainlytungsten, and the metal material 326 may include a layer of titaniumnitride/titanium composite material as an adhesive layer (not shown).The adhesive layer is typically formed by physical vapor deposition(PVD), so the metal material 326 may be composed of a compositematerial.

As shown in FIG. 3-18, for example, a chemical mechanical polishing(CMP) or etch back process is performed to planarize the upper surfaceof the third interlayer dielectric layer 324, thereby forming the firstmetal pillars 326A and the second metal pillars 326B.

As shown in FIG. 3-19, the first bonding pad 327A is formed over thefirst metal pillars 326A, and the second bonding pad 327B is formed overthe second metal pillars 326B. The first bonding pad 327A iselectrically connected to the third left electrode 323A by the firstmetal pillars 326A, and the second bonding pad 327B is electricallyconnected to the third right electrode 323B by the second metal pillars326B.

As shown in FIG. 3-20, the protection layer 13 is formed to respectivelycover the first bonding pad 327A, the second bonding pad 327B, and theexposed third interlayer dielectric layer 324. In the presentembodiment, the protection layer 13 may be formed by deposition. Next,the protective layer 13 is lithographically etched to form the firstbonding pad opening 14A exposing the first bonding pad 327A and thesecond bonding pad opening 14B exposing the second bonding pad 327B.

In addition, it should be noted that one or more second capacitordielectric structures 320 may be formed according to actual needs in thepresent embodiment. However, the steps of forming the second capacitorstructure 320 of FIG. 3-9 to FIG. 3-15 may also be omitted. That is,after the manufacture process of FIG. 3-8 is performed, the manufactureprocess step of FIG. 3-16 is directly performed. In other words, thethird conductive layer 323 is formed on the first capacitor dielectricstructure 310.

In summary, the manufacturing method of the capacitor unit and thecapacitor unit structure of the invention forms the capacitor stackedstructures on the substrate by the isolation layer to form the capacitorintegrated structure including the capacitor units. Therefore, thecapacitor integrated structure can be cut to form a plurality of thecapacitor units that can function as capacitors. Thereby, the capacitormanufacturing process and the capacitor structure can be simplified, andthe high-temperature calcination process in the manufacturing process ofthe traditional MLCC can be avoided, so as to achieve the purpose ofreducing the manufacturing cost.

Although the invention has been described with reference to the aboveembodiments, it will be apparent to one of ordinary skill in the artthat modifications to the described embodiments may be made withoutdeparting from the spirit of the invention. Accordingly, the scope ofthe invention is defined by the attached claims not by the abovedetailed descriptions.

What is claimed is:
 1. A method of manufacturing a capacitor unit,comprising: providing a substrate; forming an isolation layer on thesubstrate; forming a first capacitor stacked structure and a secondcapacitor stacked structure on the isolation layer; forming electrodeconnectors on the first capacitor stacked structure and the secondcapacitor stacked structure, wherein the electrode connectors areexposed, so that the electrode connectors, the first capacitor stackedstructure, the second capacitor stacked structure, the isolation layer,and the substrate are combined to form a capacitor integrated structure,wherein the isolation layer electrically isolates the substrate from thefirst capacitor stacked structure and the second capacitor stackedstructure; and cutting the capacitor integrated structure to form afirst capacitor unit and a second capacitor unit separated from eachother, wherein the first capacitor unit comprises two of the electrodeconnectors, the first capacitor stacked structure, a portion of theisolation layer, and a portion of the substrate, and the secondcapacitor unit comprises another two of the electrode connectors, thesecond capacitor stacked structure, another portion of the isolationlayer, and another portion of the substrate.
 2. The method ofmanufacturing the capacitor unit according to claim 1, wherein the stepof forming the first capacitor stacked structure and the secondcapacitor stacked structure comprises: forming a first conductive layeron the isolation layer; forming a capacitor dielectric layer on thefirst conductive layer; forming a second conductive layer on thecapacitor dielectric layer; lithographically etching the secondconductive layer, the capacitor dielectric layer, and the firstconductive layer thereunder in sequence to expose a first portion of thecapacitor dielectric layer and a first portion of the isolation layer;forming an interlayer dielectric layer to cover the second conductivelayer, the first portion of the capacitor dielectric layer, and thefirst portion of the isolation layer; etching the interlayer dielectriclayer to form first via holes and second via holes, wherein each of thefirst via holes passes through the first portion of the capacitordielectric layer to expose the first conductive layer under the firstportion of the capacitor dielectric layer, and each of the second viaholes exposes the second conductive layer; respectively filling thefirst via holes and the second via holes with a metal material to formfirst metal pillars and second metal pillars; and forming a firstbonding pad over the first metal pillars, and forming a second bondingpad over the second metal pillars, wherein the first bonding pad iselectrically connected to the first conductive layer by the first metalpillars to form a first electrode, and the second bonding pad iselectrically connected to the second conductive layer by the secondmetal pillars to form a second electrode.
 3. The method of manufacturingthe capacitor unit according to claim 1, wherein the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure comprises: forming a first conductive layer on the isolationlayer; lithographically etching the first conductive layer to expose afirst portion of the isolation layer; forming two spacers connected totwo sidewalls of the first conductive layer; forming a capacitordielectric layer covering the first conductive layer and the firstportion of the isolation layer, wherein the capacitor dielectric layercomprises a third portion directly formed above the first portion of theisolation layer, and the capacitor dielectric layer and the sidewalls ofthe first conductive layer are isolated by the two spacers; forming asecond conductive layer on a portion of the capacitor dielectric layerand exposing a fourth portion of the capacitor dielectric layer abovethe first conductive layer; forming an interlayer dielectric layer tocover the second conductive layer and the fourth portion of thecapacitor dielectric layer; etching the interlayer dielectric layer toform first via holes and second via holes, wherein each of the first viaholes passes through the fourth portion of the capacitor dielectriclayer to expose the first conductive layer under the fourth portion, andeach of the second via holes is disposed above the third portion of thecapacitor dielectric layer to expose the second conductive layer abovethe third portion; respectively filling the first via holes and thesecond via holes with a metal material to form first metal pillars andsecond metal pillars; forming a bonding pad metal layer to respectivelycover the interlayer dielectric layer, the first metal pillars, and thesecond metal pillars; and etching the bonding pad metal layer to form afirst bonding pad over the first metal pillars and form a second bondingpad above the second metal pillars, wherein the first bonding pad iselectrically connected to the first conductive layer by the first metalpillars to form a first electrode, and the second bonding pad iselectrically connected to the second conductive layer by the secondmetal pillars to form a second electrode.
 4. The method of manufacturingthe capacitor unit according to claim 1, wherein the step of forming thefirst capacitor stacked structure and the second capacitor stackedstructure comprises: forming a first capacitor dielectric structure onthe isolation layer, wherein the first capacitor dielectric structurecomprises a first conductive layer formed on the isolation layer and afirst capacitor dielectric layer formed on the first conductive layer,the first conductive layer comprises a first left electrode and a firstright electrode isolated from each other, and the first capacitordielectric layer comprises first left openings formed above the firstleft electrode and first right openings formed above the first rightelectrode; forming at least one second capacitor dielectric structure onthe first capacitor dielectric structure, wherein the at least onesecond capacitor dielectric structure comprises a second conductivelayer formed on the first capacitor dielectric layer and a secondcapacitor dielectric layer formed on the second conductive layer, thesecond conductive layer comprises a second left electrode and a secondright electrode isolated from each other, the second left electrode iselectrically connected to the first left electrode through the firstleft openings, the second right electrode is electrically connected tothe first right electrode through the first right openings, the secondcapacitor dielectric layer comprises second left openings formed abovethe second left electrode and second right openings formed above thesecond right electrode, the second left openings and the first leftopenings are offset from each other, and the second right openings andthe first right openings are offset from each other; forming a thirdconductive layer on the at least one second capacitor dielectricstructure, wherein the third conductive layer comprises a third leftelectrode and a third right electrode isolated from each other, thethird left electrode is electrically connected to the second leftelectrode through the second left openings, and the third rightelectrode is electrically connected to the second right electrodethrough the second right openings; forming a third interlayer dielectriclayer to cover the third conductive layer, and planarizing a surface ofthe third interlayer dielectric layer; etching the third interlayerdielectric layer to form first via holes and second via holes, whereineach of the first via holes exposes an upper surface of the third leftelectrode, and each of the second via holes exposes an upper surface ofthe third right electrode; respectively filling the first via holes andthe second via holes with a metal material to form first metal pillarsand second metal pillars; and forming a first bonding pad over the firstmetal pillars, and forming a second bonding pad over the second metalpillars, wherein the first bonding pad is electrically connected to thethird left electrode by the first metal pillars, and the second bondingpad is electrically connected to the third right electrode by the secondmetal pillars.
 5. The method of manufacturing the capacitor unitaccording to claim 4, wherein the step of forming the first capacitordielectric structure comprises: forming the first conductive layer onthe isolation layer; forming a photoresist layer on the first conductivelayer; lithographically etching the photoresist layer and the firstconductive layer to form a first trench, so that the first leftelectrode and the first right electrode isolated by the first trench areformed in the first conductive layer; removing the photoresist layerabove the first left electrode and layer the first right electrode;filling the first trench with a first interlayer dielectric layer, andmaking an upper surface of the first interlayer dielectric layer flushwith an upper surface of the first conductive layer; forming the firstcapacitor dielectric layer covering the first interlayer dielectriclayer and the first conductive layer; and lithographically etching thefirst capacitor dielectric layer to form the first left openingsexposing the first left electrode and the first right openings exposingthe first right electrode.
 6. The method of manufacturing the capacitorunit according to claim 5, wherein the step of forming the at least onesecond capacitor dielectric structure comprises: forming the secondconductive layer on the first capacitor dielectric layer, wherein thefirst left openings and the first right openings are filled with thesecond conductive layer; lithographically etching the second conductivelayer to form a second trench, so that the second left electrode and thesecond right electrode isolated by the second trench are formed in thesecond conductive layer, wherein the second trench is offset from thefirst trench, the second left electrode is electrically connected to thefirst left electrode through the first left openings, and the secondright electrode is electrically connected to the first right electrodethrough the first right openings; forming a second interlayer dielectriclayer on the second conductive layer, filling the second trench with thesecond interlayer dielectric layer, and making an upper surface of thesecond interlayer dielectric layer in the second trench flush with anupper surface of the second conductive layer; forming the secondcapacitor dielectric layer covering the second interlayer dielectriclayer and the second conductive layer; and lithographically etching thesecond capacitor dielectric layer to form the second left openingsexposing the second left electrode and the second right openingsexposing the second right electrode, wherein the second left openingsare offset from the first left openings, and the second right openingsare offset from the first right openings.
 7. The method of manufacturingthe capacitor unit according to claim 6, further comprising: forming thethird conductive layer on the second capacitor dielectric layer, whereinthe second left openings and the second right openings are filled withthe third conductive layer; lithographically etching the thirdconductive layer to form a third trench, so that the third leftelectrode and the third right electrode isolated by the third trench areformed in the third conductive layer, wherein the third trench is offsetfrom the second trench, the third left electrode is electricallyconnected to the second left electrode through the second left openings,and the third right electrode is electrically connected to the secondright electrode through the second right openings; and forming the thirdinterlayer dielectric layer on the third conductive layer, wherein thethird trench is filled with the third interlayer dielectric layer. 8.The method of manufacturing the capacitor unit according to claim 1,wherein the step of forming the first capacitor stacked structure andthe second capacitor stacked structure comprises: forming a firstcapacitor dielectric structure on the isolation layer, wherein the firstcapacitor dielectric structure comprises a first conductive layer formedon the isolation layer and a first capacitor dielectric layer formed onthe first conductive layer, the first conductive layer comprises a firstleft electrode and a first right electrode isolated from each other, andthe first capacitor dielectric layer comprises first left openingsformed above the first left electrode and first right openings formedabove the first right electrode; forming a third conductive layer on thefirst capacitor dielectric structure, wherein the third conductive layercomprises a third left electrode and a third right electrode isolatedfrom each other, the third left electrode is electrically connected tothe first left electrode through the first left openings, and the thirdright electrode is electrically connected to the first right electrodethrough the first right openings; forming a third interlayer dielectriclayer to cover the third conductive layer; lithographically etching thethird interlayer dielectric layer to form first via holes and second viaholes, wherein each of the first via holes exposes an upper surface of aportion the third left electrode, and each of the second via holesexposes an upper surface of a portion of the third right electrode;respectively filling the first via holes and the second via holes with ametal material to form first metal pillars and second metal pillars; andforming a first bonding pad over the first metal pillars, and forming asecond bonding pad over the second metal pillars, wherein the firstbonding pad is electrically connected to the third left electrode by thefirst metal pillars, and the second bonding pad is electricallyconnected to the third right electrode by the second metal pillars. 9.The method of manufacturing the capacitor unit according to claim 2,wherein the step of respectively filling the first via holes and thesecond via holes with the metal material to form first metal pillars andsecond metal pillars comprises: depositing the metal material on theinterlayer dielectric layer, wherein the first via holes and the secondvia holes are filled with the metal material; and performing aplanarization process to planarize an upper surface of the interlayerdielectric layer.
 10. The method of manufacturing the capacitor unitaccording to claim 2, further comprising: forming a protection layer torespectively cover the first bonding pad, the second bonding pad, andthe interlayer dielectric layer; and lithographically etching theprotection layer to respectively form a first bonding pad openingexposing the first bonding pad and a second bonding pad opening exposingthe second bonding pad.
 11. The method of manufacturing the capacitorunit according to claim 1, wherein the first capacitor unit is a passivecomponent connected to a printed circuit board by the two of theelectrode connectors.
 12. The method of manufacturing the capacitor unitaccording to claim 1, wherein the second capacitor unit is a passivecomponent connected to a printed circuit board by the another two of theelectrode connectors.
 13. A capacitor unit, formed by a capacitorintegrated structure, wherein the capacitor integrated structure is cutto form capacitor units separated from each other, and each of thecapacitor units comprises: a substrate; an isolation layer located onthe substrate; a capacitor stacked structure located on the isolationlayer, wherein the isolation layer electrically isolates the substratefrom the capacitor stacked structure; and two electrode connectorslocated on the capacitor stacked structure and being exposed.
 14. Thecapacitor unit according to claim 13, wherein the capacitor stackedstructure comprises: a first conductive layer located on a portion ofthe isolation layer to expose a first portion of the isolation layer; acapacitor dielectric layer located on the first conductive layer; asecond conductive layer located on a portion of the capacitor dielectriclayer to expose a first portion of the capacitor dielectric layer; aninterlayer dielectric layer located on the second conductive layer, thefirst portion of the capacitor dielectric layer, and the first portionof the isolation layer; a first bonding pad and a second bonding padrespectively located on the interlayer dielectric layer; and first metalpillars and second metal pillars, wherein the first metal pillars arelocated in the interlayer dielectric layer and pass through the firstportion of the capacitor dielectric layer to connect to the firstconductive layer under the first portion of the capacitor dielectriclayer, so that the first conductive layer is electrically connected tothe first bonding pad by the first metal pillars to form a firstelectrode, and the second metal pillars are located in the interlayerdielectric layer and connect to the second conductive layer, so that thesecond conductive layer is electrically connected to the second bondingpad by the second metal pillars to form a second electrode.
 15. Thecapacitor unit according to claim 13, wherein the capacitor stackedstructure comprises: a first conductive layer located on the isolationlayer and exposing a first portion of the isolation layer, wherein aspacer is formed on each of two sidewalls of the first conductive layer;a capacitor dielectric layer located on the first conductive layer andthe first portion of the isolation layer, wherein the capacitordielectric layer further comprises a third portion directly locatedabove the isolation layer, and the capacitor dielectric layer and eachof the sidewalls of the first conductive layer are isolated by thespacer; a second conductive layer located on a portion of the capacitordielectric layer and exposing a fourth portion of the capacitordielectric layer above the first conductive layer; an interlayerdielectric layer located on the second conductive layer and the fourthportion of the capacitor dielectric layer; a first bonding pad and asecond bonding pad respectively located on the interlayer dielectriclayer; and first metal pillars and second metal pillars, wherein thefirst metal pillars are located in the interlayer dielectric layer andpass through the fourth portion of the capacitor dielectric layer toconnect to the first conductive layer under the fourth portion of thecapacitor dielectric layer, so that the first conductive layer iselectrically connected to the first bonding pad by the first metalpillars to form a first electrode, and the second metal pillars arelocated in the interlayer dielectric layer and connect to the secondconductive layer above the third portion of the capacitor dielectriclayer, so that the second conductive layer is electrically connected tothe second bonding pad by the second metal pillars to form a secondelectrode.
 16. The capacitor unit according to claim 13, wherein thecapacitor stacked structure comprises: a first capacitor dielectricstructure located on the isolation layer and having a first conductivelayer located on the isolation layer and a first capacitor dielectriclayer located on the first conductive layer, wherein the firstconductive layer comprises a first left electrode and a first rightelectrode isolated from each other, and the first capacitor dielectriclayer comprises first left openings formed above the first leftelectrode and first right openings formed above the first rightelectrode; at least one second capacitor dielectric structure located onthe first capacitor dielectric structure, wherein the at least onesecond capacitor dielectric structure comprises a second conductivelayer located on the first capacitor dielectric layer and a secondcapacitor dielectric layer located on the second conductive layer, thesecond conductive layer comprises a second left electrode and a secondright electrode isolated from each other, the second left electrode iselectrically connected to the first left electrode through the firstleft openings, the second right electrode is electrically connected tothe first right electrode through the first right openings, the secondcapacitor dielectric layer comprises second left openings located abovethe second left electrode and second right openings located above thesecond right electrode, the second left openings and the first leftopenings are offset from each other, and the second right openings andthe first right openings are offset from each other; a third conductivelayer located on the at least one second capacitor dielectric structure,wherein the third conductive layer comprises a third left electrode anda third right electrode isolated from each other, the third leftelectrode is electrically connected to the second left electrode throughthe second left openings, and the third right electrode is electricallyconnected to the second right electrode through the second rightopenings; a third interlayer dielectric layer located on the thirdconductive layer; a first bonding pad and a second bonding padrespectively located on the third interlayer dielectric layer; and firstmetal pillars and second metal pillars respectively formed in the thirdinterlayer dielectric layer, wherein the third left electrode iselectrically connected to the first bonding pad by the first metalpillars, and the third right electrode is electrically connected to thesecond bonding pad by the second metal pillars.
 17. The capacitor unitaccording to claim 13, wherein the capacitor stacked structurecomprises: a first capacitor dielectric structure located on theisolation layer and having a first conductive layer located on theisolation layer and a first capacitor dielectric layer located on thefirst conductive layer, wherein the first conductive layer comprises afirst left electrode and a first right electrode isolated from eachother, and the first capacitor dielectric layer comprises first leftopenings formed above the first left electrode and first right openingsformed above the first right electrode; a third conductive layer locatedon the first capacitor dielectric structure, wherein the thirdconductive layer comprises a third left electrode and a third rightelectrode isolated from each other, the third left electrode iselectrically connected to the first left electrode through the firstleft openings, and the third right electrode is electrically connectedto the first right electrode through the first right openings; a thirdinterlayer dielectric layer located on the third conductive layer; afirst bonding pad and a second bonding pad respectively located on thethird interlayer dielectric layer; and first metal pillars and secondmetal pillars respectively formed in the third interlayer dielectriclayer, wherein the third left electrode is electrically connected to thefirst bonding pad by the first metal pillars, and the third rightelectrode is electrically connected to the second bonding pad by thesecond metal pillars.
 18. The capacitor unit according to claim 13,further comprising: a protection layer respectively covering the firstbonding pad and the second bonding pad; a first bonding pad openingformed in the protective layer to expose the first electrode; and asecond bonding pad opening formed on the second bonding pad to exposethe second electrode.
 19. The capacitor unit according to claim 13,wherein each of the capacitor units is a passive component connected toa printed circuit board by the two electrode connectors.